Evidence of thermionic emission in forward biased <i>?</i>-Ga<sub>2</sub>O<sub>3</sub> Schottky diodes at Boltzmann doping limit
نویسندگان
چکیده
A near-ideal and homogeneous ?-Ga2O3 Schottky diode with Co contact for a doping level of ?4.2 × 1017 cm?3 in the drift layer where Boltzmann approximation is valid reported. Unlike Si or GaN, thermionic emission shown to be dominant current conduction mechanism at this level. wide depletion region appended large built-in potential observed limit field current, which otherwise evident narrower bandgap semiconductor (such as GaN) diodes having similar carrier concentration region. The results study can used identify theoretical limits beyond ideality factor reverse leakage should start deteriorating ultra-wide based diodes.
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2022
ISSN: ['1089-7550', '0021-8979', '1520-8850']
DOI: https://doi.org/10.1063/5.0068211